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Category: TVSdiodeDescription: 1500W Mosorb™ The Zener transient voltage suppressor (unidirectional) Mosorb device is designed to protect voltage sensitive components against high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power: 1500W @ 1 ms Class 3 ESD level>(16kV)/Human body model Maximum clamping voltage @ Peak pulse current Low leakage<5 μ A Above 10V UL 497B, used for isolation circuit protection Response time is usually<1ns # # Transient voltage suppressor, On Semiconductor12855+$2.156025+$1.996350+$1.8845100+$1.8366500+$1.80462500+$1.76475000+$1.748710000+$1.7248 -
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Category: TVSdiodeDescription: 1500W Mosorb™ The Zener transient voltage suppressor (unidirectional) Mosorb device is designed to protect voltage sensitive components against high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power: 1500W @ 1 ms Class 3 ESD level>(16kV)/Human body model Maximum clamping voltage @ Peak pulse current Low leakage<5 μ A Above 10V UL 497B, used for isolation circuit protection Response time is usually<1ns # # Transient voltage suppressor, On Semiconductor77885+$2.957925+$2.738850+$2.5854100+$2.5197500+$2.47582500+$2.42115000+$2.399110000+$2.3663 -
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Category: TVSdiodeDescription: 1500W Mosorb™ The Zener transient voltage suppressor (unidirectional) Mosorb device is designed to protect voltage sensitive components against high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power: 1500W @ 1 ms Class 3 ESD level>(16kV)/Human body model Maximum clamping voltage @ Peak pulse current Low leakage<5 μ A Above 10V UL 497B, used for isolation circuit protection Response time is usually<1ns # # Transient voltage suppressor, On Semiconductor54095+$2.097925+$1.942550+$1.8337100+$1.7871500+$1.75602500+$1.71725000+$1.701610000+$1.6783 -
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Category: TVSdiodeDescription: 1500W Mosorb™ The Zener transient voltage suppressor (unidirectional) Mosorb device is designed to protect voltage sensitive components against high voltage and high-energy transients. They have excellent clamping ability, high surge capability, low Zener impedance, and fast response time. Peak power: 1500W @ 1 ms Class 3 ESD level>(16kV)/Human body model Maximum clamping voltage @ Peak pulse current Low leakage<5 μ A Above 10V UL 497B, used for isolation circuit protection Response time is usually<1ns # # Transient voltage suppressor, On Semiconductor67825+$2.323425+$2.151350+$2.0308100+$1.9792500+$1.94472500+$1.90175000+$1.884510000+$1.8587 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor7432 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor4409 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor7427 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor1751 -
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Category: TVSdiodeDescription: 1500W Mosorb™ 齐纳瞬态电压抑制器（单向） Mosorb 设备设计用于保护电压敏感组件,以抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率：1500W @1 ms 3 类 ESD 等级>(16kV)/个人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于 10V UL 497B，用于隔离回路保护 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor5931 -
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Category: TVSdiodeDescription: 1500W 齐纳瞬态电压抑制器（单向） SMC 系列设计用于保护电压敏感组件抵抗高电压和高能量瞬变。 它们具有极佳的钳位能力、高浪涌能力、低齐纳阻抗和快速响应时间。 峰值功率 − 1500W @ 1.0ms 3 类 ESD 等级> (16kV)/人体模型 最高钳位电压 @ 峰值脉冲电流 低泄漏 < 5μA 高于10V UL 497B，用于隔离回路保护 指定了最大温度系数 响应时间通常为 < 1ns ### 瞬态电压抑制器，On Semiconductor2775
